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當(dāng)前位置：首頁   >  產(chǎn)品中心  >  二維材料  >  六方氮化硼  >  CVD銅基多層氮化硼薄膜（2*2）

CVD銅基多層氮化硼薄膜（2*2）

簡要描述：Multilayer h-BN （Boron Nitride） film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.

  • 產(chǎn)品型號：
  • 廠商性質(zhì)：生產(chǎn)廠家
  • 更新時(shí)間：2024-06-03
  • 訪  問  量：1194

詳細(xì)介紹

Multilayer h-BN (Boron Nitride) film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Multilayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN

Multilayer h-BN (Boron Nitride) film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Multilayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN

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