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當前位置：首頁   >  產品中心  >  二維材料  >  六方氮化硼  >  CVD銅基單層氮化硼薄膜

CVD銅基單層氮化硼薄膜

簡要描述：Single layer h-BN （Boron Nitride） monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.

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  • 廠商性質：生產廠家
  • 更新時間：2024-06-03
  • 訪  問  量：1280

詳細介紹

Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN

Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN

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