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簡(jiǎn)要描述:硒化鉍晶體 Bi2Se3(Bismuth Selenide)晶體尺寸:10毫米電學(xué)性能:拓?fù)浣^緣體晶體結(jié)構(gòu):菱面體晶胞參數(shù):a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°晶體類(lèi)型:合成晶體純度:>99.995%
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硒化鉍晶體 Bi2Se3(Bismuth Selenide)
晶體尺寸:10毫米
電學(xué)性能:拓?fù)浣^緣體
晶體結(jié)構(gòu):菱面體
晶胞參數(shù):a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°
晶體類(lèi)型:合成
晶體純度:>99.995%
X-ray diffraction on a Bi2Se3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24
XRD of a single crystal Bi2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
EDX of a single crystal Bi2Se3.
Raman of a single crystal Bi2Se3. Measurement with a 785nm Raman at room temperature.
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