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簡(jiǎn)要描述:三硒化鋯晶體(99.995%) ZrSe3 (Zirconium Triselenide)晶體尺寸:~8毫米電學(xué)性能:半導(dǎo)體晶體結(jié)構(gòu):?jiǎn)涡本?/br>晶胞參數(shù):a = 0.541 nm, b = 0.375 nm, c = 0.944 nm, α = γ = 90°, γ = 97.50°晶體類型:合成晶體純度:>99.995%
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三硒化鋯晶體(99.995%) ZrSe3 (Zirconium Triselenide)
晶體尺寸:~8毫米
電學(xué)性能:半導(dǎo)體
晶體結(jié)構(gòu):?jiǎn)涡本?/span>
晶胞參數(shù):a = 0.541 nm, b = 0.375 nm, c = 0.944 nm, α = γ = 90°, γ = 97.50°
晶體類型:合成
晶體純度:>99.995%
X-ray diffraction on a ZrSe3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 3, 4, 5, 6, 7, 8
Powder X-ray diffraction (XRD) of a single crystal ZrSe3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Raman spectrum of a single crystal ZrSe3. Measurement was performed with a 785 nm Raman system at room temperature.
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