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簡要描述:單層氧化石墨烯(H法/進(jìn)口) Single Layer Graphene Oxide (H Method)制備方法:改良的H法直徑:1~5um厚度:0.8~1.2nm單層比:99%純度:99%堆積密度:0.44g/cm3體積密度:為0.26g/cm3
詳細(xì)介紹
單層氧化石墨烯(H法/進(jìn)口) Single Layer Graphene Oxide (H Method)
制備方法:改良的H法
直徑:1~5um
厚度:0.8~1.2nm
單層比:99%
純度:99%
堆積密度:0.44g/cm3
體積密度:為0.26g/cm3
單層氧化石墨烯(H法/進(jìn)口) Single Layer Graphene Oxide (H Method)
制備方法:改良的H法
直徑:1~5um
厚度:0.8~1.2nm
單層比:99%
純度:99%
堆積密度:0.44g/cm3
體積密度:為0.26g/cm3
TEM of Graphene Oxide
*The TEM analysis was completed through dispersing ACS-Material Graphene Oxide into water or ethanol with the help of ultrasound
TEM of Graphene Oxide
*The TEM analysis was completed through dispersing ACS-Material Graphene Oxide into water or ethanol with the help of ultrasound
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