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GaS 硫化鎵晶體 (Gallium Sulfide)

簡要描述:Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT)

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  • 廠商性質:生產廠家
  • 更新時間:2024-06-03
  • 訪  問  量:821

詳細介紹

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT), and flux zone growth, to optimize grain sizes and reduce defect concentrations. In contrast to commonly used chemical vapor transport (CVT) technique, flux grown crystals are well known for their structural perfection and electronic/optical performance. Bridgman and flux zone methods both offer similar grade qualities. Each crystal very large in size to last for years, is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. 
Properties of monoclinic GaS vdW crystals

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上海巨納科技有限公司 公司地址:上海市虹口區寶山路778號海倫國際大廈5樓   技術支持:化工儀器網
  • 聯系人:袁文軍
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  • 郵箱:yuanwenjun@sunano.com.cn

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